Novel highly-efficient and dress-free polishing technique with plasma-assisted surface modification and dressing

Slurry is widely used in polishing difficult-to-machine materials. However, it accompanied with some issues, such as the agglomeration of abrasives and high disposal cost. Although using fixed abrasive grains instead slurry can solve these problems wear loading grinding stones, which result decrease material removal rate (MRR), also need to be solved. Many researches have been conducted on self-sharpening stones. stones not efficient ultra-low pressure, large enough break bonds so expose new abrasives. In this study, a novel dress-free dry process was proposed, where combines plasma-assisted dressing Ar-based CF4 plasma vitrified-bonded stone. Polishing experiments were sintered AlN wafer. Also, main component vitrified bond materials, silica etched plasma, equivalent continuous stone surfaces. Since could constantly exposed, MRR maintained. Thus, integrity realized. Moreover, irradiation increased twice, only dress real time but modify AlF3, easily removed.